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| Equivalent circuit SAH02 Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode 2 4 1 3 Application : Chopper Regulator (Ta=25C) SAH02 -10max -10max -30min 100min 150min -0.3max 100typ 45typ 30 min 0.55 max 15 typ sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg SAH02 -30 -30 -10 -3 -0.5 800(Ta=25C) 125 -40 to +125 Unit V V V A A mW C C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) fT COB VR VF trr External Dimensions PS Pack 2.540.25 Conditions VCB=-30V VEB=-10V IC=-10mA VCE=-2V, IC=-1A VCE=-2V, IC=-0.5A IC=-0.5A, IB=-20mA VCE=-12V, IE=0.3A VCB=-10V, f=1MHz IR=100A IF=0.5A IF=100mA Unit A V 4 0.75 +0.15 -0.05 a b 1 4.320.2 A 3 2 4.8max 0.890.15 1.40.2 6.8max 3.60.2 4.0max V MHz 0.25 8.00.5 6.30.2 0.3 +0.15 -0.05 0~0.1 1.00.3 3.00.2 9.80.3 pF V V ns Weight : Approx 0.23g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) -3 -100mA -20mA Di ode I F - V F Characteristics 3 I C - V BE Temperature Characteristics (Typical) -3 (VCE=-2V) -15mA Collector Current I C( A) -2 -5m A Forward Current I F( A) -1 0m A 2 Collector Current I C( A) -2 -5m A ) emp mp) e Te -30C Cas eT -1 IB=-3m A 1 -1 C ( 25 0 0 -1 -2 -3 -4 -5 -6 0 -3 12 0 0 0.5 Forward Voltage V F( V) 1.0 0 0 -0.5 125 5 C C C 25C (Case (Cas Temp -1.0 ) -1.5 Collector-Emitter Voltage V C E( V) Base-Emittor Voltage V B E( V) ton*tstg*t f - IC Characteristics (Typical) 1.0 hFE - IC Temperature Characteristics (Typical) (V C E= -2V) 1000 DC Curr ent Gain h FE j-a(C/W) j-a - t Characteristics 300 100 ton*t st g*t f ( s) V C C 12V -I B1= I B2= 30mA 0.8 tstg 0.6 t on 500 25C -30C Transient Thermal Resistance -0.5 -1 -3 125C Swit ching Time 10 0.4 0.2 0 -0.1 tf 1 0.3 0.001 -0.5 Collector Current I C (A) -1 -3 100 -0.01 -0.05 -0.1 0.01 0.1 1 Time t(ms) 10 100 1000 Collector Current I C( A) VCE(sat) - IB Temperature Characteristics (Typical) Collecto r-Emitte r Satu ration Voltage V C E( s a t )( V) -1.5 (I C= -0.5A) -5 Safe Operating Area (Single Pulse) 1.0 100s P c - T a Derating -30C 25C Collector Curr ent I C( A) -1.0 -1 -0.5 10 m 1m s s 125C Ma xim um Powe r Dissipat io n P C( W) 0.5 -0.5 -0.1 Without Heatsink Natural Cooling -0.05 0 -1 -0.03 -3 Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 125 -5 -10 -50 -100 -300 -5 -10 -50 Base Current I B( mA) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 162 |
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